IRLZ34PBF - N-Channel Mosfet 60V 30A
Description:
Manufacturer: Vishay
Mounting Style: Through Hole
Number of channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-to-source rupture stress: 60 V
Id - Continuous drainage current: 30 A
Rds On Drain Source on Resistance: 50 mOhms
Door and Source Limit Voltage: 1 V
Vgs - Voltage of port and source: 5 V
Qg - Charging at the door: 35 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 88 W
Configuration: Single
Channel Mode: Enhancement
Transistor Type: 1 N-Channel
Brand: Vishay / Siliconix
Transconductance in advance - Min: 12 S
Fall Time: 56 ns
Rise Time: 170 ns
Typical shutdown delay time: 30 ns
Typical activation / delay time: 14 ns
Unit Weight: 600 mg